籍贯：河南信阳职称：副教授硕导

Email：ccc@njtech.edu.cn学历：博士

2002年7月中科院上海应用物理研究所核分析开放实验室博士毕业。
2002年9月---2004年12月，在清华大学微电子学研究所从事博士后研究工作，研究方向为SiGe材料，应变Si材料的UHVCD制备及SiGe HBTs集成电路工艺的研究。
2005年10月入职万博体育bet 材料科学与工程学院，从事功能薄膜材料的制备及性能的科研工作。
2016年1月-7月，英国谢菲尔德大学访学交流。

研究的方向：

1）高性能光催化材料的制备及应用研究

2）太阳能光伏材料的制备及器件的研究

3）高性能热电材料的制备及相关器件的应用研究

4）铁电、压电、热释电等功能材料的制备及器件的研究

高水平代表性论文：

1) Ting Fan,Changchun Chenand Zhonghai Tang, Hydrothermal synthesis of novel BiFeO₃/BiVO₄heterojunctions with enhanced photocatalytic activities under visible light irradiation, RSC Advances, 2016, 6, 9994–10000.

2)Ting Fan,ChangchunChen,ZhonghaiTang, YaruNi, Synthesis and characterization of g-C3N4/BiFeO3 composites with an enhanced visible light photocatalytic activity, Materials Science in Semiconductor Processing 40(2015)439–445.

3)Chang Chun CHEN, Zi Xuan Liu, GuiWang and Yi Lin YAN, Pr and Gd co-doped bismuth ferrite thin films with enhanced multiferroic properties, Bull. Mater. Sci., Vol. 37, No. 7, December 2014, pp. 1725–1729. （SCI）.

4)Chang Chun CHEN, ZiI Xuan Liu, Gui Wang, Xiao Dong Feng, Fabrication and characterization of compositionally graded Bi_1-xGd_xFeO₃thin films, Materials Science-Poland, 32(3), 2014, pp. 498-502. （SCI）.

5) Nan Ye,Chang Chun Chen，Investigation of ZnO nanorods synthesized by a solvothermal method, using Al-doped ZnO seed films, Optical Materials 34 (2012) 753–756. (SCI)

6）ChangChun Chen, LuRong Wang, ZhongHai Tang, ChunHua Lu，Electrical properties of Bi_3.15Nd_0.85Ti_2.8-xZr_0.2Mn_xO₁₂thin films with different Mn content synthesized by chemical solution deposition (CSD),Journal of Non-Crystalline Solids 357 (2011) 2093–2096. (SCI)

7)Changchun Chen, LuRong Wang, ChunHua Lu, ZhongZi Xu, Investigation of BiFe_0.95Mn_0.03Zn_0.02O₃/Bi_3.15Nd_0.85Ti_2.9Zr_0.1O₁₂heterostructure thin film fabricated by a chemical solutiondeposition technique, Materials Science in Semiconductor Processing 14 (2011) 253–256. (SCI)

8)ChangChun Chen, Ping Liu, ChunHua Lu，Synthesis and characterization of nano-sized ZnO powders by direct precipitation method，Chemical Engineering Journal 144 (2008) 509–513